DocumentCode
2976485
Title
Ion Hit Emulation by LASER Beam Model
Author
Lopez-Calle ; Franco, F.J. ; de Agapito, J.A.
Author_Institution
Dept. of Appl. Phys. III, Univ. Complutense of Madrid, Madrid
fYear
2009
fDate
11-13 Feb. 2009
Firstpage
19
Lastpage
22
Abstract
The model presented allows the emulation of the space radiation environment that seriously affects the reliable operation of the electronic devices by means of a pulsed laser. The irradiation with a pulsed laser reproduces the voltage variation that occurs in an electronic device subsequent to the passage of an ionizing particle through it. The model establishes the energy and the mass of the ions that can be emulated with the pulsed laser as a function of the laser parameters configuration and the thickness of the active layers.
Keywords
ion beam effects; laser beam effects; laser beams; reliability; LASER beam model; ion hit emulation; ionizing particle; reliability; Emulation; Laser beams; Laser modes; Laser theory; Optical materials; Optical pulses; Pulsed laser deposition; Semiconductor lasers; Semiconductor materials; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location
Santiago de Compostela
Print_ISBN
978-1-4244-2838-0
Electronic_ISBN
978-1-4244-2839-7
Type
conf
DOI
10.1109/SCED.2009.4800419
Filename
4800419
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