DocumentCode :
2976485
Title :
Ion Hit Emulation by LASER Beam Model
Author :
Lopez-Calle ; Franco, F.J. ; de Agapito, J.A.
Author_Institution :
Dept. of Appl. Phys. III, Univ. Complutense of Madrid, Madrid
fYear :
2009
fDate :
11-13 Feb. 2009
Firstpage :
19
Lastpage :
22
Abstract :
The model presented allows the emulation of the space radiation environment that seriously affects the reliable operation of the electronic devices by means of a pulsed laser. The irradiation with a pulsed laser reproduces the voltage variation that occurs in an electronic device subsequent to the passage of an ionizing particle through it. The model establishes the energy and the mass of the ions that can be emulated with the pulsed laser as a function of the laser parameters configuration and the thickness of the active layers.
Keywords :
ion beam effects; laser beam effects; laser beams; reliability; LASER beam model; ion hit emulation; ionizing particle; reliability; Emulation; Laser beams; Laser modes; Laser theory; Optical materials; Optical pulses; Pulsed laser deposition; Semiconductor lasers; Semiconductor materials; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
Type :
conf
DOI :
10.1109/SCED.2009.4800419
Filename :
4800419
Link To Document :
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