Title :
53 GHz-f/sub max/ Si/SiGe Heterojunction Bipolar Transistors
Author :
Gruhle, A. ; Kibbel, H. ; Kasper, E.
Author_Institution :
Daimler-Benz AG
Keywords :
Annealing; Boron; Electrical resistance measurement; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Metallization; Molecular beam epitaxial growth; Silicon germanium; Substrates;
Conference_Titel :
Device Research Conference, 1992. Digest. 50th Annual
Conference_Location :
Cambridge, MA, USA
DOI :
10.1109/DRC.1992.671850
