High Quality Ti-Implanted Si Layers Above Solid Solubility Limit

Author

Olea, J. ; Pastor, D. ; Toledano-Luque, M. ; San-Andrés, E. ; Mártil, I. ; González-Diaz, G.

Author_Institution

Dipt. de Fis. Aplic. III (Electr. y Electron.), Univ. Complutense de Madrid, Madrid

fYear

2009

fDate

11-13 Feb. 2009

Firstpage

38

Lastpage

41

Abstract

In this work we report the successful doping of Si with Ti at doses beyond the Mott limit for this element keeping high lattice quality. Ti implantation in Si at high doses and subsequent pulsed-laser melting (PLM) annealing have been performed. Time-of-flight secondary ion mass spectroscopy (SIMS) measurements confirm that Ti concentration exceed the Mott limit in the implanted layer, and glancing incidence X-Ray diffraction (GIXRD) and transmission electron microscopy (TEM) measurements prove that good crystallinity can be achieved over solid solubility limit. Hall effect characterization points out a high electrical activation and high mobility in all samples.

Keywords

X-ray diffraction; ion implantation; laser materials processing; melting; silicon; solid solubility; titanium; transmission electron microscopy; Hall effect; Mott limit; Si; Si layers; Ti; glancing incidence X-Ray diffraction; high electrical activation; high lattice quality; high mobility; pulsed laser melting; solid solubility limit; time-of-flight secondary ion mass spectroscopy; titanium implanted; transmission electron microscopy; Annealing; Impurities; Ion implantation; Lattices; Mass spectroscopy; Photovoltaic cells; Pulse measurements; Solids; Transmission electron microscopy; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2009. CDE 2009. Spanish Conference on

Conference_Location

Santiago de Compostela

Print_ISBN

978-1-4244-2838-0

Electronic_ISBN

978-1-4244-2839-7

Type

conf

DOI

10.1109/SCED.2009.4800424

Filename

4800424