• DocumentCode
    2976677
  • Title

    Neutron Detection with Silicon Devices

  • Author

    Guardiola, C. ; Lozano, M. ; Pellegrini, G..

  • Author_Institution
    Centro Nac. de Microelectron., IMB-CNM, Barcelona
  • fYear
    2009
  • fDate
    11-13 Feb. 2009
  • Firstpage
    54
  • Lastpage
    56
  • Abstract
    Most neutron detectors use some type of conversion material to convert the incident neutron into secondary charged particles, which can then be detected inside the detector bulk afterward. In this way, semiconductor detectors incorporating neutron reactive material on top of a diode substrate can be used as a neutron detector. These reactions emit charged particles and recoil nucleus with energies high enough to be distinguished from the gamma ray background. Based in the experience in microfabricated radiation detectors, CNM-IMB (national center of microelectronic at Barcelona, Spain) has started a new research line in solid state neutron detectors for imaging or dissymmetry. Geant4 Monte-Carlo simulation package was used to forecast the detection efficiency of planar structures. The simulated detectors were covered with a layer of Boron, therefore, a simple silicon neutron detector is a combination of a planar diode covered with a neutron converter layer. At the same time, initial experimental measurements of silicon pad detectors covered with neutron converts are been carried out in the autonomous University of Barcelona with a neutron source (241 Am-Be) with interesting results.
  • Keywords
    Monte Carlo methods; boron; diodes; neutron detection; semiconductor device models; silicon; Geant4 Monte-Carlo simulation package; Si-B-JkJk; diode substrate; microfabricated radiation detector; neutron detection; neutron reactive material; planar structures; semiconductor detectors; silicon devices; Microelectronics; Neutrons; Optical imaging; Packaging; Radiation detectors; Semiconductor diodes; Semiconductor materials; Silicon devices; Solid state circuits; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices, 2009. CDE 2009. Spanish Conference on
  • Conference_Location
    Santiago de Compostela
  • Print_ISBN
    978-1-4244-2838-0
  • Electronic_ISBN
    978-1-4244-2839-7
  • Type

    conf

  • DOI
    10.1109/SCED.2009.4800428
  • Filename
    4800428