DocumentCode
2976677
Title
Neutron Detection with Silicon Devices
Author
Guardiola, C. ; Lozano, M. ; Pellegrini, G..
Author_Institution
Centro Nac. de Microelectron., IMB-CNM, Barcelona
fYear
2009
fDate
11-13 Feb. 2009
Firstpage
54
Lastpage
56
Abstract
Most neutron detectors use some type of conversion material to convert the incident neutron into secondary charged particles, which can then be detected inside the detector bulk afterward. In this way, semiconductor detectors incorporating neutron reactive material on top of a diode substrate can be used as a neutron detector. These reactions emit charged particles and recoil nucleus with energies high enough to be distinguished from the gamma ray background. Based in the experience in microfabricated radiation detectors, CNM-IMB (national center of microelectronic at Barcelona, Spain) has started a new research line in solid state neutron detectors for imaging or dissymmetry. Geant4 Monte-Carlo simulation package was used to forecast the detection efficiency of planar structures. The simulated detectors were covered with a layer of Boron, therefore, a simple silicon neutron detector is a combination of a planar diode covered with a neutron converter layer. At the same time, initial experimental measurements of silicon pad detectors covered with neutron converts are been carried out in the autonomous University of Barcelona with a neutron source (241 Am-Be) with interesting results.
Keywords
Monte Carlo methods; boron; diodes; neutron detection; semiconductor device models; silicon; Geant4 Monte-Carlo simulation package; Si-B-JkJk; diode substrate; microfabricated radiation detector; neutron detection; neutron reactive material; planar structures; semiconductor detectors; silicon devices; Microelectronics; Neutrons; Optical imaging; Packaging; Radiation detectors; Semiconductor diodes; Semiconductor materials; Silicon devices; Solid state circuits; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location
Santiago de Compostela
Print_ISBN
978-1-4244-2838-0
Electronic_ISBN
978-1-4244-2839-7
Type
conf
DOI
10.1109/SCED.2009.4800428
Filename
4800428
Link To Document