GaN/AlN Axial Multi Quantum Well Nanowires for Optoelectronic Devices

Author

Conesa-Boj, S. ; Arbiol, J. ; Furtmayr, F. ; Stark, C. ; Schäfer, S. ; Stutzmann, M. ; Eickhoff, M. ; Peiró, F. ; Morante, J.R.

Author_Institution

Dept. d´´Electron., Univ. de Barcelona, Barcelona

fYear

2009

fDate

11-13 Feb. 2009

Firstpage

61

Lastpage

64

Abstract

III-nitride based quantum wells (QWs) have been extensively studied as active buildings blocks for different electronic and optoelectronic devices. Several samples of GaN/AlN axial multi quantum well nanowires (MQW NWs) have been synthesized, leading to NWs with a MQW structure with GaN wells of different widths along the growth axis, 1.5, 2, 3 and 4 nm. In this work structural and optical properties are studied by means of high resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) analysis respectively.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; molecular beam epitaxial growth; nanowires; optical materials; optoelectronic devices; photoluminescence; quantum well devices; semiconductor growth; semiconductor quantum wells; transmission electron microscopy; wide band gap semiconductors; GaN-AlN; HRTEM; MQW structure; axial multiquantum well nanowires; high-resolution transmission electron microscopy; optoelectronic devices; photoluminescence analysis; plasma-assisted molecular beam epitaxy; size 1.5 nm; size 2 nm; size 3 nm; size 4 nm; structural properties; Gallium nitride; Nanowires; Optical microscopy; Optical superlattices; Optoelectronic devices; Plasma temperature; Quantum well devices; Stimulated emission; Substrates; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2009. CDE 2009. Spanish Conference on

Conference_Location

Santiago de Compostela

Print_ISBN

978-1-4244-2838-0

Electronic_ISBN

978-1-4244-2839-7

Type

conf

DOI

10.1109/SCED.2009.4800430

Filename

4800430