Investigation of a New Partial Ground Plane Based MOSFET on Selective Buried Oxide

Author

Loan, Sajad A. ; Qureshi, S. ; Iyer, Srikrishna

Author_Institution

Electr. Eng. Dept., Indian Inst. of Technol. Kanpur, Kanpur

fYear

2009

fDate

11-13 Feb. 2009

Firstpage

77

Lastpage

80

Abstract

In this paper, a numerical simulation study of a novel device namely selective buried oxide (SELBOX) MOSFET with partial ground plane (PGP) is performed. The key characteristics of the proposed device are investigated by an extensive simulation study and are compared with the conventional silicon-on-insulator (SOI) MOS device and a SELBOX device without PGP. The simulations have revealed that the proposed device is thermally efficient. Further, a significant reduction in short channel effects has been observed in the proposed device. The proposed device is having less DIBL effect and steep subthreshold slope in comparison to SELBOX device for channel length of less than 40 nm. A significant improvement in subthreshold leakage has also been observed in the proposed device.

Keywords

MOSFET; numerical analysis; MOS device; MOSFET; PGP; SELBOX device; numerical simulation; partial ground plane; selective buried oxide; silicon-on-insulator; Circuit simulation; Degradation; Leakage current; MOS devices; MOSFET circuits; Medical simulation; Parasitic capacitance; Silicon on insulator technology; Transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2009. CDE 2009. Spanish Conference on

Conference_Location

Santiago de Compostela

Print_ISBN

978-1-4244-2838-0

Electronic_ISBN

978-1-4244-2839-7

Type

conf

DOI

10.1109/SCED.2009.4800434

Filename

4800434