Title :
Investigation of a New Partial Ground Plane Based MOSFET on Selective Buried Oxide
Author :
Loan, Sajad A. ; Qureshi, S. ; Iyer, Srikrishna
Author_Institution :
Electr. Eng. Dept., Indian Inst. of Technol. Kanpur, Kanpur
Abstract :
In this paper, a numerical simulation study of a novel device namely selective buried oxide (SELBOX) MOSFET with partial ground plane (PGP) is performed. The key characteristics of the proposed device are investigated by an extensive simulation study and are compared with the conventional silicon-on-insulator (SOI) MOS device and a SELBOX device without PGP. The simulations have revealed that the proposed device is thermally efficient. Further, a significant reduction in short channel effects has been observed in the proposed device. The proposed device is having less DIBL effect and steep subthreshold slope in comparison to SELBOX device for channel length of less than 40 nm. A significant improvement in subthreshold leakage has also been observed in the proposed device.
Keywords :
MOSFET; numerical analysis; MOS device; MOSFET; PGP; SELBOX device; numerical simulation; partial ground plane; selective buried oxide; silicon-on-insulator; Circuit simulation; Degradation; Leakage current; MOS devices; MOSFET circuits; Medical simulation; Parasitic capacitance; Silicon on insulator technology; Transistors; Voltage;
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
DOI :
10.1109/SCED.2009.4800434
