• DocumentCode
    2976783
  • Title

    Linearity study of DG MOSFETs

  • Author

    Lazaro, Antonio ; Cerdeira, A. ; Estrada, M. ; Nae, B. ; Iiguez, Benjamin

  • Author_Institution
    Dept. d ´´Eng. Electron., Electr. i Autom., Univ. Rovira i Virgili, Tarragona
  • fYear
    2009
  • fDate
    11-13 Feb. 2009
  • Firstpage
    81
  • Lastpage
    84
  • Abstract
    A compact explicit model for undoped Double-Gate (DG) SOI MOSFET including velocity saturation is presented. Using this model, intermodulation linearity obtained from device level Harmonic Balance (HB) simulation and Integral Function Method (IFM) are compared.
  • Keywords
    MOSFET; intermodulation; semiconductor device models; silicon-on-insulator; device level harmonic balance simulation; integral function method; intermodulation linearity; undoped double-gate SOI MOSFET; velocity saturation; Analytical models; Circuit simulation; Frequency; Integrated circuit modeling; Linearity; MOSFETs; Microwave circuits; Semiconductor films; Semiconductor process modeling; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices, 2009. CDE 2009. Spanish Conference on
  • Conference_Location
    Santiago de Compostela
  • Print_ISBN
    978-1-4244-2838-0
  • Electronic_ISBN
    978-1-4244-2839-7
  • Type

    conf

  • DOI
    10.1109/SCED.2009.4800435
  • Filename
    4800435
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2976783