DocumentCode :
2976813
Title :
Design and Simulation of a Novel Nano Structure Quantum Well Voltage Regulator to have a Lower Regulated Voltage
Author :
Shabani, Pejman ; Ganji, Jabbar
Author_Institution :
Electr. Eng. Dept., Shahid Chamran Univ., Ahvaz
fYear :
2009
fDate :
11-13 Feb. 2009
Firstpage :
88
Lastpage :
91
Abstract :
In this paper we present a novel nano structure quantum well voltage regulator (QWVR) to regulate a voltage in very low voltages, that can be used in low voltage and low power IC´s. This structure is based on the double electron layer tunneling transistor (DELTT). We used the depletion mode MOSFET in series with the DELTT and before it to eliminate higher states of resonant tunneling current. Simulation results show that the voltage regulation is occurred around 0.3 v. A desired regulated voltage is obtained with a specific value of the thickness and the concenturation of the GaAs and the AlGaAs epilayers. To simulating the proposed structure, the stationary viscous quantum hydrodynamic model has been used.
Keywords :
III-V semiconductors; MOSFET; gallium arsenide; nanotechnology; quantum well devices; resonant tunnelling devices; voltage regulators; GaAs; depletion mode MOSFET; double electron layer tunneling transistor; epilayers; low power IC; nanostructure quantum well voltage regulator; resonant tunneling current; viscous quantum hydrodynamic model; voltage 0.3 V; voltage regulation; Contacts; Electrons; Gallium arsenide; Hydrodynamics; Low voltage; MOSFET circuits; Regulators; Resonance; Resonant tunneling devices; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
Type :
conf
DOI :
10.1109/SCED.2009.4800437
Filename :
4800437
Link To Document :
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