High-Performance In0.75Ga0.25As Implant-Free n-type MOSFETs for Low Power Applications

The performance of implant-free (IF), n-type III-V MOSFETs with an In_0.75Ga_0.25As channel have been evaluated using a 2D finite-element Monte Carlo device simulator. We investigate the device performance of a set of scaled transistors with gate lengths of 30, 20 and 15 nm at a drain bias of 0.5 V to determine whether this novel architecture can deliver high drain current at low bias conditions required for high-performance CMOS applications.