Title :
High-Performance In0.75Ga0.25As Implant-Free n-type MOSFETs for Low Power Applications
Author :
Ayubi-Moak, Jason S. ; Kalna, K. ; Asenov, A.
Author_Institution :
Device Modelling Group, Univ. of Glasgow, Glasgow
Abstract :
The performance of implant-free (IF), n-type III-V MOSFETs with an In0.75Ga0.25As channel have been evaluated using a 2D finite-element Monte Carlo device simulator. We investigate the device performance of a set of scaled transistors with gate lengths of 30, 20 and 15 nm at a drain bias of 0.5 V to determine whether this novel architecture can deliver high drain current at low bias conditions required for high-performance CMOS applications.
Keywords :
III-V semiconductors; MOSFET; Monte Carlo methods; finite element analysis; gallium arsenide; indium compounds; low-power electronics; 2D finite-element Monte Carlo device simulator; In0.75Ga0.25As; drain bias; drain current; gate length; low power applications; n-type III-V MOSFETs; size 15 nm; size 20 nm; size 30 nm; voltage 0.5 V; Acoustic scattering; Electron optics; Indium gallium arsenide; MOSFETs; Optical scattering; Particle scattering; Phonons; Rough surfaces; Surface roughness; Ultrafast optics;
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
DOI :
10.1109/SCED.2009.4800438
