Title :
Comparison of ultrasound and γ-radiation influence on transport properties of MnHdTe and CdMnHgTe-crystals
Author :
Olikh, Jaroslav M. ; Tymochko, Mykola D. ; Khivrych, Volodymyr I.
Author_Institution :
Phys. Dept., Ukrainian Acad. of Sci., Ukraine
Abstract :
The paper presents theoretical and experimental investigations of narrow-gap semiconductors, MnHgTe and CdMnHgTe. Comparison of electrophysical properties of ultrasound treated and irradiated samples shows some analogy between the two kinds of external action effects, allowing an acoustic annealing of radiation defects to be carried out and, in some cases, ultrasound to be use for modeling radiation induced processes in CdMnHgTe.
Keywords :
cadmium compounds; gamma-ray effects; manganese compounds; mercury compounds; narrow band gap semiconductors; semiconductor process modelling; transport processes; ultrasonic effects; γ-radiation influence; CdMnHgTe; MnHgTe; electrophysical properties; gamma-radiation influence; narrow-gap semiconductors; radiation induced processes; semiconductor cadmium-manganese-mercury-telluride crystals; semiconductor manganese-mercury-telluride crystals; transport properties; ultrasound influence; Acoustic scattering; Annealing; Conductivity; Crystallization; Crystals; Manganese; Mercury (metals); Optical scattering; Tellurium; Ultrasonic imaging;
Conference_Titel :
Ultrasonics Symposium, 2004 IEEE
Print_ISBN :
0-7803-8412-1
DOI :
10.1109/ULTSYM.2004.1418149
