Comparison of ultrasound and γ-radiation influence on transport properties of MnHdTe and CdMnHgTe-crystals

Author

Olikh, Jaroslav M. ; Tymochko, Mykola D. ; Khivrych, Volodymyr I.

Author_Institution

Phys. Dept., Ukrainian Acad. of Sci., Ukraine

Volume

3

fYear

2004

fDate

23-27 Aug. 2004

Firstpage

1690

Abstract

The paper presents theoretical and experimental investigations of narrow-gap semiconductors, MnHgTe and CdMnHgTe. Comparison of electrophysical properties of ultrasound treated and irradiated samples shows some analogy between the two kinds of external action effects, allowing an acoustic annealing of radiation defects to be carried out and, in some cases, ultrasound to be use for modeling radiation induced processes in CdMnHgTe.

Keywords

cadmium compounds; gamma-ray effects; manganese compounds; mercury compounds; narrow band gap semiconductors; semiconductor process modelling; transport processes; ultrasonic effects; γ-radiation influence; CdMnHgTe; MnHgTe; electrophysical properties; gamma-radiation influence; narrow-gap semiconductors; radiation induced processes; semiconductor cadmium-manganese-mercury-telluride crystals; semiconductor manganese-mercury-telluride crystals; transport properties; ultrasound influence; Acoustic scattering; Annealing; Conductivity; Crystallization; Crystals; Manganese; Mercury (metals); Optical scattering; Tellurium; Ultrasonic imaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2004 IEEE

ISSN

1051-0117

Print_ISBN

0-7803-8412-1

Type

conf

DOI

10.1109/ULTSYM.2004.1418149

Filename

1418149