• DocumentCode
    2976875
  • Title

    Analytical Model for Collector Current Gummel Plots of Heterojunction Bipolar Transistors

  • Author

    Sachelarie, Dan ; Predusca, Gabriel

  • Author_Institution
    Univ. Valahia, Targoviste
  • fYear
    2009
  • fDate
    11-13 Feb. 2009
  • Firstpage
    100
  • Lastpage
    103
  • Abstract
    The work develops an analytical model for HBT´s Gummel plots, based on thermionic-field-emission theory. This new model is easier to apply for usual HBT´s Gummel characterization. Its validity was demonstrated by analysis of the experimental results of silicon nitride passivated InP/InGaAs heterojunction bipolar transistors.
  • Keywords
    III-V semiconductors; field emission; gallium arsenide; heterojunction bipolar transistors; indium compounds; passivation; semiconductor device models; semiconductor doping; silicon compounds; thermionic emission; HBT; Si3N4-InP-InGaAs; collector current Gummel plots; emitter-base doping concentration; heterojunction bipolar transistor; thermionic-field-emission theory; Analytical models; Doping; Electron devices; Electron emission; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Niobium; Semiconductor process modeling; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices, 2009. CDE 2009. Spanish Conference on
  • Conference_Location
    Santiago de Compostela
  • Print_ISBN
    978-1-4244-2838-0
  • Electronic_ISBN
    978-1-4244-2839-7
  • Type

    conf

  • DOI
    10.1109/SCED.2009.4800440
  • Filename
    4800440
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2976875