DocumentCode :
2976875
Title :
Analytical Model for Collector Current Gummel Plots of Heterojunction Bipolar Transistors
Author :
Sachelarie, Dan ; Predusca, Gabriel
Author_Institution :
Univ. Valahia, Targoviste
fYear :
2009
fDate :
11-13 Feb. 2009
Firstpage :
100
Lastpage :
103
Abstract :
The work develops an analytical model for HBT´s Gummel plots, based on thermionic-field-emission theory. This new model is easier to apply for usual HBT´s Gummel characterization. Its validity was demonstrated by analysis of the experimental results of silicon nitride passivated InP/InGaAs heterojunction bipolar transistors.
Keywords :
III-V semiconductors; field emission; gallium arsenide; heterojunction bipolar transistors; indium compounds; passivation; semiconductor device models; semiconductor doping; silicon compounds; thermionic emission; HBT; Si3N4-InP-InGaAs; collector current Gummel plots; emitter-base doping concentration; heterojunction bipolar transistor; thermionic-field-emission theory; Analytical models; Doping; Electron devices; Electron emission; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Niobium; Semiconductor process modeling; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
Type :
conf
DOI :
10.1109/SCED.2009.4800440
Filename :
4800440
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2976875
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