Title :
A new inversion charge centroid model for surrounding gate transistors with HfO2 as gate insulator
Author :
Balaguer, M. ; Roldán, J.B. ; Tienda-Luna, I.M. ; Ruiz, F.G. ; Godoy, A. ; Gaimiz, F. ; Sampedro, C.
Abstract :
A model for the inversion charge centroid of surrounding gate transistors (SGTs) has been obtained in order to consider HfO2 as gate insulator instead of SiO2. The results obtained with the model have been compared to the simulation data provided by a self-consistent solution of the 2D Poisson and Schrodinger equations. Our model reproduces correctly the inversion charge centroid data of several SGTs with different values of the silicon radii (4, 6.25 and 8 nm) and values of the HfO2 effective mass in the range of m*/m0 [0.1-0.7]. The inversion charge including quantum effects has also been calculated for SGTs with HfO2 as gate insulator.
Keywords :
MOSFET; Poisson equation; Schrodinger equation; hafnium compounds; semiconductor device models; 2D Poisson equations; HfO2-Si; MOSFET; SGT; Schrodinger equations; gate insulator; inversion charge centroid model; quantum effects; radius 4 nm; radius 6.25 nm; radius 8 nm; self-consistent solution; surrounding gate transistors; Effective mass; Electrons; Geometry; Hafnium oxide; High K dielectric materials; Insulation; MOSFETs; Poisson equations; Silicon; Wave functions;
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
DOI :
10.1109/SCED.2009.4800441
