Title :
Modeling and simulation of CMOS APS
Author :
Blanco-Filgueira, Beatriz ; López, Paula ; Cabello, Diego ; Ernst, J. ; Neubauer, H. ; Hauer, Johann
Author_Institution :
Dept. of Electron. & Comput. Sci., Univ. of Santiago de Compostela, Santiago de Compostela
Abstract :
This work studies the importance of the peripheral collection in the overall photoresponse in deep sub-micron CMOS 3T active pixel sensors (APS), focusing on the contribution of the bottom surface of the depletion region. We analyze a semi-analytical expression, inspired by previous works, that models the photoresponse of a set of fabricated pixels with octagonal photodiodes that could be easily extended to different geometries. Device simulation results are used to study the behaviour of these structures with the purpose of using computer aided design (CAD) tools for the next technological nodes research.
Keywords :
CMOS image sensors; photodiodes; CMOS APS simulation; active pixel sensor; complementary metal-oxide semiconductor; computer aided design; deep submicron CMOS three transistor APS; octagonal photodiode; peripheral collection; photoresponse estimation; pixel fabrication process; CMOS image sensors; CMOS process; CMOS technology; Charge coupled devices; Computational modeling; Computer simulation; Geometry; Photodiodes; Semiconductor device modeling; Solid modeling;
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
DOI :
10.1109/SCED.2009.4800445
