DocumentCode
2976991
Title
Improvement of the k.p Approach for Describing Silicon Quantum Dots
Author
Rodríguez-Bolivar, S. ; Gómez-Campos, F.M. ; Luque-Rodríguez, A. ; López-Villanueva, J.A. ; Jiménez-Tejada, J.A. ; Lara-Bullejos, P. ; Carceller, J.E.
Author_Institution
Dept. de Electron. y Tecnol. de los Comput., Univ. de Granada, Granada
fYear
2009
fDate
11-13 Feb. 2009
Firstpage
124
Lastpage
127
Abstract
We present in this work a correction to the Effective Mass Approach based on atomistic calculations for studies on hole confinement in silicon quantum dots. The idea is to connect two different frameworks such as Tight-Binding and k.p in order to take advantage of the computational efficiency of the latter. Further, this work would enable to gain an insight into the causes of difference between both approaches.
Keywords
effective mass; elemental semiconductors; semiconductor quantum dots; silicon; tight-binding calculations; Si; atomistic calculations; effective mass; hole confinement; kldrp algorithm; quantum dots; tight-binding framework; Atomic measurements; Computational efficiency; Computational modeling; Effective mass; Electron devices; Kinetic energy; Potential well; Quantum computing; Quantum dots; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location
Santiago de Compostela
Print_ISBN
978-1-4244-2838-0
Electronic_ISBN
978-1-4244-2839-7
Type
conf
DOI
10.1109/SCED.2009.4800446
Filename
4800446
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