• DocumentCode
    2977031
  • Title

    Analytical Modeling of Effective Conduction Path Effect (ECPE) on the Subthreshold Swing of DG-MOSFETs

  • Author

    Tiwari, Pramod Kumar ; Panda, Chinmaya Ranjan ; Agarwal, Anupam ; Sharma, Prateek ; Jit, S.

  • Author_Institution
    Dept. of Electron. Eng., Inst. of Technol. Banaras Hindu Univ., Varanasi
  • fYear
    2009
  • fDate
    11-13 Feb. 2009
  • Firstpage
    136
  • Lastpage
    139
  • Abstract
    A closed form expression for the effective conduction path parameter of subthreshold conduction is presented for dual gate metal oxide semiconductor field effect transistor (DG MOSFET). Based on the effective conduction path an analytical expression of subthreshold swing is obtained.
  • Keywords
    MOSFET; DG-MOSFET; conduction path parameter; dual gate metal oxide semiconductor field effect transistor; effective conduction path effect; subthreshold swing; Analytical models; Doping; Electron devices; FETs; MOSFET circuits; Microelectronics; Scalability; Semiconductor process modeling; Silicon; Subthreshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices, 2009. CDE 2009. Spanish Conference on
  • Conference_Location
    Santiago de Compostela
  • Print_ISBN
    978-1-4244-2838-0
  • Electronic_ISBN
    978-1-4244-2839-7
  • Type

    conf

  • DOI
    10.1109/SCED.2009.4800449
  • Filename
    4800449
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2977031