Title :
Analytical Modeling of Effective Conduction Path Effect (ECPE) on the Subthreshold Swing of DG-MOSFETs
Author :
Tiwari, Pramod Kumar ; Panda, Chinmaya Ranjan ; Agarwal, Anupam ; Sharma, Prateek ; Jit, S.
Author_Institution :
Dept. of Electron. Eng., Inst. of Technol. Banaras Hindu Univ., Varanasi
Abstract :
A closed form expression for the effective conduction path parameter of subthreshold conduction is presented for dual gate metal oxide semiconductor field effect transistor (DG MOSFET). Based on the effective conduction path an analytical expression of subthreshold swing is obtained.
Keywords :
MOSFET; DG-MOSFET; conduction path parameter; dual gate metal oxide semiconductor field effect transistor; effective conduction path effect; subthreshold swing; Analytical models; Doping; Electron devices; FETs; MOSFET circuits; Microelectronics; Scalability; Semiconductor process modeling; Silicon; Subthreshold current;
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
DOI :
10.1109/SCED.2009.4800449
