Simulation Methods for Ionizing Radiation Single Event Effects Evaluation

Author

Fernández-Martinez, P. ; Mogollón, J.M. ; Hidalgo, S. ; Palomo, F.R. ; Flores, D. ; Aguirre, M.A.

Author_Institution

Centro Nac. de Microelectron., Campus UAB, Barcelona

fYear

2009

fDate

11-13 Feb. 2009

Firstpage

144

Lastpage

147

Abstract

Single Event Effects (SEE) produced by highly energetic particle hits on sensitive circuit regions constitutes a main topic in reliability and device performance in space applications. Due to their high cost and limited availability, alternative methods to particle accelerator tests have been developed. In this sense, numerical simulations represent an excellent tool to predict device and circuit behaviour induced by particle hits. This paper deals with simulation techniques and their use in SEE study. Some different methods are shown and their possibilities to determine SEEs and their consequences on circuit behaviour are evaluated.

Keywords

circuit simulation; integrated circuit design; integrated circuit reliability; integrated circuit testing; ion beam effects; radiation hardening (electronics); SEE study; energetic particle hit; integrated circuit behaviour evaluation; integrated circuit reliability; integrated circuit testing; integrated circuits design; ionizing radiation; numerical simulation; sensitive integrated circuit region; single event effects evaluation; space applications; Computational modeling; Discrete event simulation; Effective mass; Electron devices; Ionizing radiation; MOSFETs; Nanoscale devices; Quantum computing; Quantum mechanics; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2009. CDE 2009. Spanish Conference on

Conference_Location

Santiago de Compostela

Print_ISBN

978-1-4244-2838-0

Electronic_ISBN

978-1-4244-2839-7

Type

conf

DOI

10.1109/SCED.2009.4800451

Filename

4800451