DocumentCode :
2977084
Title :
Lateral Punch-Through TVS Devices: Design and Fabrication
Author :
Urresti, Jesus ; Hidalgo, Salvador ; Flores, David ; Rebollo, José
Author_Institution :
Centro Nac. de Microelectron. (CNM-IMB-CSIC), Bellaterra
fYear :
2009
fDate :
11-13 Feb. 2009
Firstpage :
148
Lastpage :
151
Abstract :
The design and fabrication of a novel lateral punch-through TVS (transient voltage suppressor) device addressed to on chip protection against ESD (electrostatic discharge) is reported in this paper. In order to reduce the breakdown voltage, the inclusion of a field place, connected to the collector, has been proposed for first time. The compatible CMOS technological process followed in the integration of this device and its technological and electrical characterization is large explained, being these results in agreement with the previous studies.
Keywords :
CMOS integrated circuits; electric breakdown; electrostatic discharge; micromechanical devices; transients; CMOS technological process; breakdown voltage; chip protection; electrical characterization; electrostatic discharge; lateral punch-through TVS device; transient voltage suppressor; Breakdown voltage; CMOS process; CMOS technology; Diodes; Electric breakdown; Electrostatic discharge; Fabrication; Monolithic integrated circuits; Power system protection; Silicon on insulator technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
Type :
conf
DOI :
10.1109/SCED.2009.4800452
Filename :
4800452
Link To Document :
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