Lateral Punch-Through TVS Devices: Design and Fabrication

Author

Urresti, Jesus ; Hidalgo, Salvador ; Flores, David ; Rebollo, José

Author_Institution

Centro Nac. de Microelectron. (CNM-IMB-CSIC), Bellaterra

fYear

2009

fDate

11-13 Feb. 2009

Firstpage

148

Lastpage

151

Abstract

The design and fabrication of a novel lateral punch-through TVS (transient voltage suppressor) device addressed to on chip protection against ESD (electrostatic discharge) is reported in this paper. In order to reduce the breakdown voltage, the inclusion of a field place, connected to the collector, has been proposed for first time. The compatible CMOS technological process followed in the integration of this device and its technological and electrical characterization is large explained, being these results in agreement with the previous studies.

Keywords

CMOS integrated circuits; electric breakdown; electrostatic discharge; micromechanical devices; transients; CMOS technological process; breakdown voltage; chip protection; electrical characterization; electrostatic discharge; lateral punch-through TVS device; transient voltage suppressor; Breakdown voltage; CMOS process; CMOS technology; Diodes; Electric breakdown; Electrostatic discharge; Fabrication; Monolithic integrated circuits; Power system protection; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2009. CDE 2009. Spanish Conference on

Conference_Location

Santiago de Compostela

Print_ISBN

978-1-4244-2838-0

Electronic_ISBN

978-1-4244-2839-7

Type

conf

DOI

10.1109/SCED.2009.4800452

Filename

4800452