Frequency Limits of InP-based Integrated Circuits

Author

Rodwell, Mark ; Lind, E. ; Griffith, Z. ; Bank, S.R. ; Crook, A.M. ; Singisetti, U. ; Wistey, M. ; Burek, G. ; Gossard, A.C.

Author_Institution

Univ. of California, Santa Barbara

fYear

2007

fDate

14-18 May 2007

Firstpage

9

Lastpage

13

Abstract

We examine the limits in scaling of InP-based bipolar and field effect transistors for increased device bandwidth. With InP-based HBTs, emitter and base contact resistivities and IC thermal resistance are the major limits to increased device bandwidth; devices with 1-1.5 THz simultaneous f_tau and f_max are feasible. Major challenges faced in developing either InGaAs HEMTs having THz cutoff frequencies or InGaAs-channel MOSFETs having drive current consistent with the 22 nm ITRS objectives include the low two-dimensional effective density of states and the high bound state energies in narrow quantum wells.

Keywords

III-V semiconductors; MOSFET; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; monolithic integrated circuits; HBT; HEMT; IC thermal resistance; InGaAs; InP; MOSFET; base contact resistivity; bipolar effect transistors; bound state energies; emitter contact resistivity; field effect transistors; frequency 1 THz to 1.5 THz; integrated circuits; narrow quantum wells; two-dimensional effective density of states; Bandwidth; Conductivity; Contact resistance; Cutoff frequency; FETs; HEMTs; Indium gallium arsenide; MODFETs; MOSFETs; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0875-X

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.380676

Filename

4265866