Using Grid Infrastructures for a Stationary DGSOI Monte Carlo Simulation

Author

Valin, R. ; Aldegunde, M. ; Seoane, N. ; Garcia-Loureiro, A. ; Sampedro, C. ; Godoy, A. ; Gamiz, F.

Author_Institution

Dept. de Electron. y Comput., Univ. de Santiago de Compostela, Santiago de Compostela

fYear

2009

fDate

11-13 Feb. 2009

Firstpage

172

Lastpage

175

Abstract

Nowadays grid infrastructures are widely used to deal with many different types of problems. Mainly, these infrastructures may be very useful for single program multiple data (SPMD) applications, thanks to the considerable amount of available resources. This paper presents a method to reduce the computational time of stationary two dimensional Monte Carlo (MC) simulations for the study of nanoscale double gate silicon on Insulator transistors (DGSOI) taking advantage of such facilities. Using this technique we have obtained an important reduction in the execution time.

Keywords

Monte Carlo methods; silicon-on-insulator; Monte Carlo simulation; grid infrastructure; nanoscale double gate silicon on insulator transistors; single program multiple data application; Computational modeling; Electromagnetic compatibility; Electron devices; Electronics industry; Energy consumption; Grid computing; Monte Carlo methods; Poisson equations; Silicon on insulator technology; Stationary state;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2009. CDE 2009. Spanish Conference on

Conference_Location

Santiago de Compostela

Print_ISBN

978-1-4244-2838-0

Electronic_ISBN

978-1-4244-2839-7

Type

conf

DOI

10.1109/SCED.2009.4800458

Filename

4800458