High Gain G-Band MMIC Amplifiers Based on Sub-50 nm Gate Length InP HEMT

Author

Liu, P.H. ; Yoshida, W. ; Lee, J. ; Dang, L. ; Wang, J. ; Liu, W. ; Uyeda, J. ; Li, D. ; Mei, X.B. ; Deal, W. ; Barsky, M. ; Kim, Y.M. ; Lange, M. ; Chin, T.P. ; Radisic, V. ; Gaier, T. ; Fung, A. ; Lai, R.

Author_Institution

Northrop Grumman Space Technol., Pasadena

fYear

2007

fDate

14-18 May 2007

Firstpage

22

Lastpage

23

Abstract

We have recently developed a sub-50nm gate length InP HEMT (high electron mobility transistor) process with a peak transconductance of 2000 mS/mm at 1V. A 3-stage single-ended common source 150-220 GHz MMIC LNA demonstrates greater than 20 dB gain at 200 GHz (> 7 dB gain per stage) and is >5 dB higher LNA gain compared to the same MMIC design fabricated on our baselined 70 nm gate length InP HEMT MMIC process. To our knowledge, this is the highest amplifier gain per stage achieved at this frequency range.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; electric admittance; field effect MIMIC; high electron mobility transistors; indium compounds; low noise amplifiers; 3-stage single-ended common source; G-band MMIC amplifiers; InP; LNA; baselined gate length; conductance 2000 mS; frequency 150 GHz to 220 GHz; gain per stage; gate length HEMT; high electron mobility transistor; low noise amplifier; monolithic microwave integrated circuit; peak transconductance; size 70 nm; Conference proceedings; Electric variables measurement; Frequency; Gain; HEMTs; Indium phosphide; MMICs; Resists; Space technology; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0875-X

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.380679

Filename

4265869