Title :
Design of Strain and Bandgap Profiles of InGaAsP Fabricated by Selective Area Metal-Organic Vapor Phase Epitaxy for Polarization Independent Operation
Author :
Shioda, Tomonari ; Sugiyama, Masakazu ; Nakano, Yoshiaki
Author_Institution :
Univ. of Tokyo, Tokyo
Abstract :
We designed the strain and bandgap distribution of tensile InGaAs/InGaAsP grown by selective-area MOVPE using vapor-phase diffusion model. A design principle of selective-area growth for integrating polarization independent components is discussed.
Keywords :
energy gap; gallium arsenide; indium compounds; semiconductor growth; vapour phase epitaxial growth; InGaAs-InGaAsP; InGaAsP fabrication; metal-organic vapor phase epitaxy; polarization independent operation; selective-area MOVPE; strain-bandgap distribution; vapor-phase diffusion model; Capacitive sensors; Epitaxial growth; Indium gallium arsenide; Microscopy; Monolithic integrated circuits; Optical polarization; Photonic band gap; Quantum well devices; Semiconductor optical amplifiers; Tensile strain;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381118
