Title :
3D Drift-Diffusion Simulation with Quantum-Corrections of Tri-Gate MOSFETs
Author :
Garcia-Loureiro, A. ; Aldegunde, M. ; Seoane, N. ; Kalna, K. ; Asenov, A.
Author_Institution :
Dept. de Electron. y Comput., Univ. de Santiago de Compostela, Santiago de Compostela
Abstract :
Accurate physical modelling of the carrier transport as well as a correct description of complex 3D geometries of advanced devices are needed in order to predict their behaviour and to optimise design. A parallel 3D drift-diffusion (D-D) simulator with quantum corrections using the density gradient approach designed to work on unstructured tetrahedral elements has been developed for the simulations of nano-MOSFETs. The 3D D-D code is applied to the simulation of a 40 nm gate length tri-gate MOSFET with a HfO2 gate stack. The simulated ID-VG characteristics are in an excellent agreement with experimental data. The results from simulations with the density gradient show a quantum confinement threshold voltage shift, a deterioration of subthreshold slope and lowering of the on-current.
Keywords :
MOSFET; diffusion; finite element analysis; hafnium compounds; semiconductor device models; 3D D-D code; HfO2; carrier transport; complex 3D geometries; gate length TriGate MOSFET; parallel 3D drift-diffusion simulator; parallel 3D finite element device simulator; physical modelling; quantum confinement threshold voltage shift; size 40 nm; Computational modeling; Equations; FinFETs; Geometry; Libraries; MOSFETs; Potential well; Quantum computing; Solid modeling; Transistors;
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
DOI :
10.1109/SCED.2009.4800465
