DocumentCode :
2977349
Title :
InAlAs/InGaAs HEMTs with Minimum Noise Figure of 1.0 dB AT 94 GHz
Author :
Takahashi, T. ; Sato, M. ; Makiyama, K. ; Hirose, T. ; Hara, N.
Author_Institution :
Fujitsu Limited, Atsugi
fYear :
2007
fDate :
14-18 May 2007
Firstpage :
55
Lastpage :
58
Abstract :
The authors achieved a minimum noise figure (NFmin) of 1.0 dB at 94 GHz using 110 nm-gate InAlAs/InGaAs HEMTs with a thin Schottky barrier layer. The obtained NFmin is one of the lowest values ever reported for HEMTs. This low-noise property is promising for applications involving millimeter-wave communications and image sensors.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; millimetre waves; HEMT; Schottky barrier layer; aluminium compounds; gallium compounds; high electron mobility transistors; image sensors; indium compounds; millimeter-wave communications; noise figure; Contact resistance; Etching; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Noise figure; Schottky barriers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
ISSN :
1092-8669
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2007.381121
Filename :
4265878
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2977349
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