• DocumentCode
    2977349
  • Title

    InAlAs/InGaAs HEMTs with Minimum Noise Figure of 1.0 dB AT 94 GHz

  • Author

    Takahashi, T. ; Sato, M. ; Makiyama, K. ; Hirose, T. ; Hara, N.

  • Author_Institution
    Fujitsu Limited, Atsugi
  • fYear
    2007
  • fDate
    14-18 May 2007
  • Firstpage
    55
  • Lastpage
    58
  • Abstract
    The authors achieved a minimum noise figure (NFmin) of 1.0 dB at 94 GHz using 110 nm-gate InAlAs/InGaAs HEMTs with a thin Schottky barrier layer. The obtained NFmin is one of the lowest values ever reported for HEMTs. This low-noise property is promising for applications involving millimeter-wave communications and image sensors.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; millimetre waves; HEMT; Schottky barrier layer; aluminium compounds; gallium compounds; high electron mobility transistors; image sensors; indium compounds; millimeter-wave communications; noise figure; Contact resistance; Etching; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Noise figure; Schottky barriers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
  • Conference_Location
    Matsue
  • ISSN
    1092-8669
  • Print_ISBN
    1-4244-0875-X
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2007.381121
  • Filename
    4265878
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2977349