Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs

Author

Aldegunde, Manuel ; García-Loureiro, Antonio J. ; Seoane, Natalia ; Asenov, Asen ; Kalna, Karol

Author_Institution

Dept. de Electron. y Comput., Univ. de Santiago de Compostela, Santiago de Compostela

fYear

2009

fDate

11-13 Feb. 2009

Firstpage

211

Lastpage

214

Abstract

We describe a meshing strategy which allows the placement of the nodes of the mesh in the positions of the atoms in the selected regions of the device. This meshing strategy is used to simulate a 15 nm gate length Implant Free In_0.75Ga_0.25As MOSFET with a 3D parallel drift-diffusion simulator. We illustrate the use of this mesh in a small study of the impact of random dopants positioned in the iquest-doping layer after rigorous calibration against Monte Carlo simulations.

Keywords

III-V semiconductors; MOSFET; gallium arsenide; indium compounds; mesh generation; 3D parallel drift-diffusion simulator; InGaAs; Monte Carlo simulations; atomistic simulation; implant-free nanoMOSFET; mesh generation; size 15 nm; Atomic layer deposition; Gallium arsenide; III-V semiconductor materials; Implants; Indium gallium arsenide; Lattices; MOSFET circuits; Mesh generation; Nanoscale devices; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2009. CDE 2009. Spanish Conference on

Conference_Location

Santiago de Compostela

Print_ISBN

978-1-4244-2838-0

Electronic_ISBN

978-1-4244-2839-7

Type

conf

DOI

10.1109/SCED.2009.4800468

Filename

4800468