Title :
High Performance and High Reliability of 0.1 μm InP HEMT MMIC Technology on 100 mm InP Substrates
Author :
Lai, R. ; Chou, Y.C. ; Lee, L.J. ; Liu, P.H. ; Leung, D. ; Kan, Q. ; Mei, X. ; Lin, C.H. ; Farkas, D. ; Barsky, M. ; Eng, VD ; Cavus, A. ; Lange, M. ; Chin, P. ; Wojtowicz, M. ; Block, T. ; Oki, A.
Author_Institution :
Northrop Grumman Corp., Redondo Beach
Abstract :
Uniform millimeter wave 0.1 mum InP HEMT MMICs (Ka-band, Q-band, W-band, and distributed amplifiers) on 100 mm InP substrates have been demonstrated. Moreover, high performance and high reliability have been achieved. The results indicate that the readiness of 100 mm InP HEMT technology for insertion to support military/space applications.
Keywords :
III-V semiconductors; MIMIC; high electron mobility transistors; indium compounds; HEMT MMIC technology; InP; Ka-band amplifiers; Q-band amplifiers; W-band amplifiers; distributed amplifiers; Gallium arsenide; HEMTs; Indium phosphide; MMICs; Millimeter wave radar; Millimeter wave technology; Millimeter wave transistors; Space technology; Spaceborne radar; Substrates;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381123
