DocumentCode
2977512
Title
Improved modeling of Coulomb-enhanced and Urbach-broadened absorption edge of direct-gap semiconductors for band-parameter extraction
Author
Lin, E.Y. ; Lay, T.S. ; Chang, T.Y.
Author_Institution
Nat. Sun Yat-Sen Univ., Kaohsiung
fYear
2007
fDate
14-18 May 2007
Firstpage
99
Lastpage
102
Abstract
An improved model for the Coulomb-enhanced and Urbach-broadened absorption spectrum that can be used to extract the band parameters for the band-edge region as well as to calculate the refractive index spectrum accurately.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; infrared spectra; refractive index; spectral line broadening; ultraviolet spectra; visible spectra; Coulomb-enhanced absorption spectrum; GaAs; InP; Urbach-broadened absorption edge; band-parameter extraction; direct-gap semiconductors; refractive index spectrum; Absorption; Indium phosphide; Optical devices; Optical modulation; Optical refraction; Optical variables control; Piecewise linear techniques; Refractive index; Semiconductor optical amplifiers; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location
Matsue
ISSN
1092-8669
Print_ISBN
1-4244-0875-X
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2007.381132
Filename
4265889
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