DocumentCode
2977526
Title
Polarization Effects of Ecitation Light Source on Photoluminescence Spectra of INGAASP/INP Quantum Well Structures
Author
Imai, Hajime ; Motomura, Asako
fYear
2007
fDate
14-18 May 2007
Firstpage
103
Lastpage
106
Abstract
We have observed the photoluminescence (PL) spectra of InGaAsP/InP quantum well structures. PL spectra peak movements for TE or TM mode excitation are observed by changing the incident angle of the excitation light. The PL spectra peak for TM mode excitation moves toward the longer wavelength as compared with that estimated by the heat dissipation.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; polarisation; semiconductor quantum wells; InGaAsP-InP; TE mode excitation; TM mode excitation; excitation light source; photoluminescence spectra; polarization effects; quantum well structures; Absorption; Indium phosphide; Laser excitation; Laser transitions; Light sources; Optical polarization; Photoluminescence; Tellurium; Temperature; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location
Matsue
ISSN
1092-8669
Print_ISBN
1-4244-0875-X
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2007.381133
Filename
4265890
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