Title :
Polarization Effects of Ecitation Light Source on Photoluminescence Spectra of INGAASP/INP Quantum Well Structures
Author :
Imai, Hajime ; Motomura, Asako
Abstract :
We have observed the photoluminescence (PL) spectra of InGaAsP/InP quantum well structures. PL spectra peak movements for TE or TM mode excitation are observed by changing the incident angle of the excitation light. The PL spectra peak for TM mode excitation moves toward the longer wavelength as compared with that estimated by the heat dissipation.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; polarisation; semiconductor quantum wells; InGaAsP-InP; TE mode excitation; TM mode excitation; excitation light source; photoluminescence spectra; polarization effects; quantum well structures; Absorption; Indium phosphide; Laser excitation; Laser transitions; Light sources; Optical polarization; Photoluminescence; Tellurium; Temperature; Wavelength measurement;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381133
