Title :
InP-HEMT-TIA with Differential Optical Input Using Vertical High Topology Pin-Diodes
Author :
Nannen, I. ; Poloczek, A. ; Matiss, A. ; Brockerhoff, W. ; Regolin, I. ; Tegude, F.J.
Author_Institution :
Univ. Duisburg-Essen, Duisburg
Abstract :
A monolithically integrated combination of high electron mobility transistors and high responsivity (1.0 A/W) vertical pin-diodes have been used in optical synchronous quadrature phase-shift keying transimpedance amplifier design for 40 Gbit/s transmission.
Keywords :
III-V semiconductors; high electron mobility transistors; indium compounds; integrated optoelectronics; optical communication equipment; optical design techniques; optical fibre communication; p-i-n photodiodes; quadrature phase shift keying; HEMT-TIA; InP; differential optical input; high electron mobility transistors; monolithically integrated device; optical synchronous quadrature phase-shift keying; transimpedance amplifier design; vertical high-topology pin-diodes; Electron optics; HEMTs; Integrated optics; MODFETs; Optical amplifiers; Optical design; Phase shift keying; Semiconductor optical amplifiers; Stimulated emission; Topology;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381134
