DocumentCode
2977569
Title
An Analytical Model and Measurement on the InAlAs/InGaAs High-Electron-Mobility Transistor with Oxidized InAlAs Gate
Author
Huang, Jung-Sheng ; Lee, Kuan-Wei ; Lee, Fang-Ming ; Huang, Yung-Sheng ; Wang, Yeong-Her
Author_Institution
I-Shou Univ., Kaohsiung
fYear
2007
fDate
14-18 May 2007
Firstpage
114
Lastpage
117
Abstract
The analytical model and measurement of InAlAs/InGaAs metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) lattice-matched to InP substrate with a thin InAlAs native oxide layer are compared and achieved a good agreement, which show the validity of the proposed MOS-HEMT model.
Keywords
III-V semiconductors; MOSFET; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; InAlAs-InGaAs; InP; MOS-HEMT; high-electron-mobility transistor; metal-oxide-semiconductor; thin native oxide layer; Analytical models; Buffer layers; Electric variables measurement; Etching; Gold; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location
Matsue
ISSN
1092-8669
Print_ISBN
1-4244-0875-X
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2007.381136
Filename
4265893
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