Title :
An Analytical Model and Measurement on the InAlAs/InGaAs High-Electron-Mobility Transistor with Oxidized InAlAs Gate
Author :
Huang, Jung-Sheng ; Lee, Kuan-Wei ; Lee, Fang-Ming ; Huang, Yung-Sheng ; Wang, Yeong-Her
Author_Institution :
I-Shou Univ., Kaohsiung
Abstract :
The analytical model and measurement of InAlAs/InGaAs metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) lattice-matched to InP substrate with a thin InAlAs native oxide layer are compared and achieved a good agreement, which show the validity of the proposed MOS-HEMT model.
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; InAlAs-InGaAs; InP; MOS-HEMT; high-electron-mobility transistor; metal-oxide-semiconductor; thin native oxide layer; Analytical models; Buffer layers; Electric variables measurement; Etching; Gold; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381136
