Title :
Analysis of the C-V characteristic in SiO2/GaN MOS capacitors
Author :
Cortes, I. ; Al-Alam, E. ; Besland, M.P. ; Regreny, P. ; Morancho, F. ; Cazarré, A. ; Cordier, Y. ; Goullet, A. ; Isoird, K.
Author_Institution :
LAAS, ICNRS, Toulouse
Abstract :
In this work, C-V characteristics of MOS capacitors fabricated by depositing SiO2 by plasma-enhanced chemical-vapor-deposition at low temperature (300degC) on an N-type GaN epitaxial layer have been performed to analyze the quality and reliability of the resultant MOS device. Additional information has been extracted by comparing the small-signal simulations of equivalent MOS 2D structures with the C-V experimental results.
Keywords :
MOS capacitors; chemical vapour deposition; epitaxial layers; reliability; silicon compounds; C-V characteristic; MOS capacitors; SiO2-GaN; epitaxial layer; plasma-enhanced chemical-vapor-deposition; reliability; Capacitance-voltage characteristics; Chemical analysis; Epitaxial layers; Gallium nitride; MOS capacitors; Plasma chemistry; Plasma devices; Plasma properties; Plasma simulation; Plasma temperature;
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
DOI :
10.1109/SCED.2009.4800479
