• DocumentCode
    2977575
  • Title

    Analysis of the C-V characteristic in SiO2/GaN MOS capacitors

  • Author

    Cortes, I. ; Al-Alam, E. ; Besland, M.P. ; Regreny, P. ; Morancho, F. ; Cazarré, A. ; Cordier, Y. ; Goullet, A. ; Isoird, K.

  • Author_Institution
    LAAS, ICNRS, Toulouse
  • fYear
    2009
  • fDate
    11-13 Feb. 2009
  • Firstpage
    254
  • Lastpage
    257
  • Abstract
    In this work, C-V characteristics of MOS capacitors fabricated by depositing SiO2 by plasma-enhanced chemical-vapor-deposition at low temperature (300degC) on an N-type GaN epitaxial layer have been performed to analyze the quality and reliability of the resultant MOS device. Additional information has been extracted by comparing the small-signal simulations of equivalent MOS 2D structures with the C-V experimental results.
  • Keywords
    MOS capacitors; chemical vapour deposition; epitaxial layers; reliability; silicon compounds; C-V characteristic; MOS capacitors; SiO2-GaN; epitaxial layer; plasma-enhanced chemical-vapor-deposition; reliability; Capacitance-voltage characteristics; Chemical analysis; Epitaxial layers; Gallium nitride; MOS capacitors; Plasma chemistry; Plasma devices; Plasma properties; Plasma simulation; Plasma temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices, 2009. CDE 2009. Spanish Conference on
  • Conference_Location
    Santiago de Compostela
  • Print_ISBN
    978-1-4244-2838-0
  • Electronic_ISBN
    978-1-4244-2839-7
  • Type

    conf

  • DOI
    10.1109/SCED.2009.4800479
  • Filename
    4800479
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2977575