DocumentCode
2977577
Title
Evidence of Existence of Different Surface States in INP-Based High Electron Mobility Transistors (HEMTs)
Author
Tan, Chee Leong ; Wang, Hong ; Radhakrishnan, K.
Author_Institution
Nanyang Technol. Univ, Singapore
fYear
2007
fDate
14-18 May 2007
Firstpage
118
Lastpage
120
Abstract
-We have provided direct evidence of the existence of two different kinds of surface traps in InAlAs/InGaAs high electron mobility transistors through measurement of the device transient drain current. The mechanisms that were responsible for the observed drain current transient at different gate voltages have been proposed. In addition, two different kinds of interface traps with distinct time constants have been measured.
Keywords
gallium arsenide; high electron mobility transistors; indium compounds; HEMT; InAlAs-InGaAs; InP; high electron mobility transistors; transient drain current; Current measurement; Electron traps; Gold; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Time measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location
Matsue
ISSN
1092-8669
Print_ISBN
1-4244-0875-X
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2007.381137
Filename
4265894
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