Fundamental Properties of Intentionally Neutralized Argon Fast ATM Beam Etching for III-V Semiconductors

Author

Suhara, Michihiko ; Naoi, Mamoru ; Matsuzaka, Norihiko ; Matsuura, Eigo ; Okumura, Tsugunori

Author_Institution

Tokyo Metropolitan Univ., Tokyo

fYear

2007

fDate

14-18 May 2007

Firstpage

121

Lastpage

124

Abstract

Fast atom (neutral) beam etching technique have already been developed and studied especially for fabrication processes in silicon based electron devices, however, electronic property of FAB etching for III-V materials have not been well clarified so far. In this paper, effects of surface damage due to FAB etching on current-voltage (I-V) characteristics of Schottky diodes were examined by introducing intentionally neutralized beam bombardment on n-GaAs surface, and moreover relation between neutralization properties and FAB etching properties for n-InGaAs were investigated, focusing on argon.

Keywords

III-V semiconductors; Schottky barriers; Schottky diodes; atom-surface impact; etching; gallium arsenide; GaAs; I-V characteristics; III-V semiconductors; Schottky diodes; current-voltage characteristics; intentionally neutralized argon fast atom beam etching; neutralized beam bombardment; surface damage effects; Argon; Atomic beams; Dry etching; Fabrication; III-V semiconductor materials; Particle beams; Schottky diodes; Silicon; Voltage; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0875-X

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381138

Filename

4265895