Title :
Fundamental Properties of Intentionally Neutralized Argon Fast ATM Beam Etching for III-V Semiconductors
Author :
Suhara, Michihiko ; Naoi, Mamoru ; Matsuzaka, Norihiko ; Matsuura, Eigo ; Okumura, Tsugunori
Author_Institution :
Tokyo Metropolitan Univ., Tokyo
Abstract :
Fast atom (neutral) beam etching technique have already been developed and studied especially for fabrication processes in silicon based electron devices, however, electronic property of FAB etching for III-V materials have not been well clarified so far. In this paper, effects of surface damage due to FAB etching on current-voltage (I-V) characteristics of Schottky diodes were examined by introducing intentionally neutralized beam bombardment on n-GaAs surface, and moreover relation between neutralization properties and FAB etching properties for n-InGaAs were investigated, focusing on argon.
Keywords :
III-V semiconductors; Schottky barriers; Schottky diodes; atom-surface impact; etching; gallium arsenide; GaAs; I-V characteristics; III-V semiconductors; Schottky diodes; current-voltage characteristics; intentionally neutralized argon fast atom beam etching; neutralized beam bombardment; surface damage effects; Argon; Atomic beams; Dry etching; Fabrication; III-V semiconductor materials; Particle beams; Schottky diodes; Silicon; Voltage; Wet etching;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381138
