(Cl2:Ar) ICP/RIE Dry Etching of Al(Ga) Sb FOR AlSb/InAs HEMTs

Author

Lefebvre, Eric ; Borg, Malin ; Malmkvist, Mikael ; Grahn, Jan ; Desplanque, Ludovic ; Wallart, Xavier ; Roelens, Yannick ; Dambrine, Gilles ; Cappy, Alain ; Bollaert, Sylvain

Author_Institution

Chalmers Univ. of Technol., Goteborg

fYear

2007

fDate

14-18 May 2007

Firstpage

125

Lastpage

128

Abstract

Dry etching of AlSb and Al_0.80Ga_0.20Sb has been performed by inductively coupled plasma/reactive ion etching based on a (Cl₂:Ar) gas mixture without addition of BCI₃. The dry etch process has been used to fabricate AlSb/InAs high electron mobility transistors isolated by a shallow mesa. Good DC/RF results, with extrinsic f_T/f_max= 135/105 GHz, have been measured for a 2times50 mum HEMT with a gate length of 295 nm.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; sputter etching; (Cl₂:Ar) gas mixture; Al_0.80Ga_0.20Sb; AlSb; AlSb-InAs; BCI₃ addition; HEMT; ICP/RIE dry etching; frequency 105 GHz; frequency 135 GHz; gate length; high electron mobility transistors; inductively coupled plasma etching; reactive ion etching; shallow mesa; Buffer layers; Dry etching; Gold; HEMTs; Indium phosphide; MODFETs; Oxidation; Plasma applications; Plasma measurements; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0875-X

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381139

Filename

4265896