DocumentCode :
2977645
Title :
New direct spectroscopic method for determination of the energy distribution of interface states
Author :
Kobayashi, H. ; Yamashita, Y. ; Nakato, Y. ; Koshizuka, M. ; Nishioka, Y.
Author_Institution :
Dept. of Chem., Osaka Univ., Japan
Volume :
2
fYear :
1994
fDate :
5-9 Dec 1994
Firstpage :
1644
Abstract :
Energy distribution of interface states for Si-based MIS solar cell devices with an ultra-thin oxide layer of ~2.5 nm is obtained from measurements of X-ray photoelectron spectra under biases. The interface spectrum for the native oxide layer has one peaked-structure near the midgap with a density maximum of ~2×1013 cm-2 eV-1, and it is attributed to an isolated Si dangling bond. For the chemical oxide layer formed with HNO3, the interface spectrum has two peaked-structure with much reduced density. The peak below (or above) the midgap is attributed to a Si dangling bond weakly interacting with a Si (or oxygen) atom in the oxide layer. In is shown that an increase in the ideality factor is caused by both the static and dynamic effects of the interface states
Keywords :
MIS devices; X-ray photoelectron spectra; dangling bonds; elemental semiconductors; interface states; semiconductor device testing; silicon; solar cells; 2.5 nm; HNO3; MIS solar cell devices; Si; X-ray photoelectron spectra; chemical oxide layer; dangling bond; direct spectroscopic method; energy distribution; ideality factor; interface spectrum; interface states; measurements; ultra-thin oxide layer; Bonding; Chemicals; Current measurement; Energy measurement; Interface states; MIS devices; Photovoltaic cells; Silicon; Spectroscopy; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
Type :
conf
DOI :
10.1109/WCPEC.1994.520533
Filename :
520533
Link To Document :
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