Exact circuit power loss design method for high power density converters utilizing Si-IGBT/SiC-diode hybrid pairs

Author

Takao, Kazuto ; Ohashi, Hiromichi

Author_Institution

Corporative R&D Center, Toshiba Corp., Kawasaki

fYear

2008

fDate

1-3 Sept. 2008

Firstpage

54

Lastpage

60

Abstract

An exact design method of circuit power loss is developed. The method is useful for designing high power density converters utilizing Si-IGBT/SiC-Shottky-barrier-diode (SiC-SBD) or high voltage Si-IEGT/SiC-PiN-diode hybrid pairs. For the exact power loss calculation, an empirical method to extract device model parameters is introduced. The calculation results of the power loss are compared with experimental results, and the good agreements are confirmed. By using the method, the power loss of the 4.5 kV Si-IEGT/5 kV SiC-PiN diode hybrid pair is estimated to investigate the possibility of further increase of the switching frequency.

Keywords

Schottky diodes; elemental semiconductors; insulated gate bipolar transistors; losses; p-i-n diodes; power bipolar transistors; power convertors; power semiconductor diodes; silicon; silicon compounds; wide band gap semiconductors; IGBT; PiN diode; Si; SiC; circuit power loss design method; high power density converter; shottky-barrier-diode; switching frequency; voltage 4.5 kV; voltage 5 kV; Analytical models; Choppers; Design methodology; Equivalent circuits; Insulated gate bipolar transistors; Semiconductor diodes; Switching circuits; Switching frequency; Switching loss; Voltage; Device modeling; High Power Density Systems; IGBT; SiC-devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Motion Control Conference, 2008. EPE-PEMC 2008. 13th

Conference_Location

Poznan

Print_ISBN

978-1-4244-1741-4

Electronic_ISBN

978-1-4244-1742-1

Type

conf

DOI

10.1109/EPEPEMC.2008.4635244

Filename

4635244