Title :
Current Transport Mechanism in InP/InAlAs/GaAsSb/InP Double Heterojunction Bipolar Transistors
Author :
Wang, Hong ; Ng, Chai Wah ; Radhakrishnan, K. ; Ng, Geok Ing
Author_Institution :
Nanyang Technol. Univ., Singapore
Abstract :
In this work, the dc performance of InP/InAlAs/GaAsSb/InP DHBTs were characterized in the temperature range of 300 K to 420 K. The device transport mechanisms in DHBTs with a type-I E-B junction and a type-II B-C junction were studied. The experimental results indicate that electron injection at E-B junction could be affected by conduction barrier limited carrier transport. The conduction band offset of ~0.1 eV at InAlAs/GaAsSb heterojunction was estimated.
Keywords :
III-V semiconductors; carrier mobility; conduction bands; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor heterojunctions; InP-InAlAs-GaAsSb-InP; conduction band offset; conduction barrier limited carrier transport; current transport; double heterojunction bipolar transistors; temperature 300 K to 420 K; type-I E-B junction; type-II B-C junction; Conference proceedings; Double heterojunction bipolar transistors; Electrons; Indium compounds; Indium phosphide; Microelectronics; Molecular beam epitaxial growth; Substrates; Temperature distribution; Temperature measurement;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381145
