Current Transport Mechanism in InP/InAlAs/GaAsSb/InP Double Heterojunction Bipolar Transistors

Author

Wang, Hong ; Ng, Chai Wah ; Radhakrishnan, K. ; Ng, Geok Ing

Author_Institution

Nanyang Technol. Univ., Singapore

fYear

2007

fDate

14-18 May 2007

Firstpage

147

Lastpage

150

Abstract

In this work, the dc performance of InP/InAlAs/GaAsSb/InP DHBTs were characterized in the temperature range of 300 K to 420 K. The device transport mechanisms in DHBTs with a type-I E-B junction and a type-II B-C junction were studied. The experimental results indicate that electron injection at E-B junction could be affected by conduction barrier limited carrier transport. The conduction band offset of ~0.1 eV at InAlAs/GaAsSb heterojunction was estimated.

Keywords

III-V semiconductors; carrier mobility; conduction bands; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor heterojunctions; InP-InAlAs-GaAsSb-InP; conduction band offset; conduction barrier limited carrier transport; current transport; double heterojunction bipolar transistors; temperature 300 K to 420 K; type-I E-B junction; type-II B-C junction; Conference proceedings; Double heterojunction bipolar transistors; Electrons; Indium compounds; Indium phosphide; Microelectronics; Molecular beam epitaxial growth; Substrates; Temperature distribution; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0875-X

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381145

Filename

4265902