Surface Recombination in InP/InAlAs/GaAsSb/InP Double Heterojunction Bipolar Transistors

Author

Ng, Chai Wah ; Wang, Hong ; Radhakrishnan, K.

Author_Institution

Nanyang Technol. Univ., Singapore

fYear

2007

fDate

14-18 May 2007

Firstpage

151

Lastpage

153

Abstract

In this work, a detailed study on the surface recombination in InP/InAlAs/GaAsSb/InP DHBTs was carried out. The experimental data clearly reveal that, by using an InP/InAlAs composite emitter to form a type-I E-B heterojunctuion, the surface recombination at low J_C is suppressed with a reduction of K_{B_surf} by a factor more than 50. The temperature-dependent study of K_{B_surf} suggests that, at low J_C level, the contribution of surface recombination velocity-limited mechanism cannot be ignored.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; surface recombination; InP-InAlAs-GaAsSb-InP; composite emitter; double heterojunction bipolar transistors; surface recombination; type-I E-B heterojunctuion; velocity-limited mechanism; Conference proceedings; Current density; Double heterojunction bipolar transistors; Gallium arsenide; Indium compounds; Indium phosphide; Microelectronics; Region 2; Spontaneous emission; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0875-X

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381146

Filename

4265903