DocumentCode :
2977754
Title :
Temperature dependent performance of 1.55 μm AlGaInAs laser diodes
Author :
Yang, C. ; Stinz, A. ; Lester, L. ; Malloy, K.J.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Volume :
1
fYear :
2005
fDate :
22-27 May 2005
Firstpage :
568
Abstract :
1.55 μm AlGaInAs multi-quantum-well lasers with varying quantum well strain and number of quantum wells are studied. Results show that high strain and more quantum wells lead to a high T0 and high injection efficiency.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; quantum well lasers; thermo-optical effects; 1.55 micron; AlGaInAs; injection efficiency; laser diodes; multiquantum-well lasers; quantum well number; quantum well strain; temperature dependent performance; Capacitive sensors; Diode lasers; Lasers and electrooptics; Optical materials; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature dependence; Temperature sensors; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
Type :
conf
DOI :
10.1109/CLEO.2005.201849
Filename :
1572915
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2977754
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