A Compact Thermal-Via Packaging Design of GaInP/GaAs Collector-Up HBTs in Small High-Power Amplifiers

Author

Lee, P.H. ; Chou, J.H. ; Tseng, H.C.

Author_Institution

Nat. Cheng Kung Univ., Tainan

fYear

2007

fDate

14-18 May 2007

Firstpage

161

Lastpage

164

Abstract

We model the thermal performance of the large thermal via which under the collector-up heterojunction bipolar transistor (HBT) by using a finite element method. A compact thermal-via packaging of GaInP/GaAs collector-up HBTs has been designed and calculated. The results indicate that the configuration can be further reduced by 29% to meet the requirement of small high-power amplifiers for cellular-phone communication systems.

Keywords

III-V semiconductors; finite element analysis; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave amplifiers; microwave bipolar transistors; power amplifiers; power bipolar transistors; semiconductor device packaging; thermal management (packaging); GaInP-GaAs; cellular-phone communication systems; collector-up HBT; compact thermal-via packaging design; finite element method; heterojunction bipolar transistor; high-power amplifiers; Fingers; Finite element methods; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Microwave amplifiers; Microwave transistors; Packaging; Temperature distribution; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0875-X

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381147

Filename

4265904