Title :
Measurement of temperature sensitive parameter characteristics of semiconductor silicon and silicon -carbide power devices
Author :
Nowak, Mietek ; Rabkowski, Jacek ; Barlik, Roman
Author_Institution :
Warsaw Univ. of Technol.,, Warsaw
Abstract :
In this paper, results of laboratory investigation of representative samples of semiconductor silicon and silicon carbide power devices, such as PiN diode, Shottky diode, IGBT and JFET, are presented. With use of a thermal chamber the characteristics of temperature sensitive parameters for selected types of devices were determined by measurements within the range 25 - 150degC. The measurement was done using short pulses, which are not able to change measured temperatures. The results have to enable identification of junction temperature in the case of other tests, especially those oriented on energy losses, efficiency, and thermal management.
Keywords :
insulated gate bipolar transistors; junction gate field effect transistors; power semiconductor devices; IGBT; JFET; PiN diode; Shottky diode; semiconductor silicon; silicon-carbide power devices; temperature sensitive parameter characteristics; thermal management; Insulated gate bipolar transistors; Laboratories; Power measurement; Pulse measurements; Semiconductor diodes; Silicon carbide; Temperature distribution; Temperature measurement; Temperature sensors; Thermal management; IGBT; JFET; Silicon Carbide diode; device characterization;
Conference_Titel :
Power Electronics and Motion Control Conference, 2008. EPE-PEMC 2008. 13th
Conference_Location :
Poznan
Print_ISBN :
978-1-4244-1741-4
Electronic_ISBN :
978-1-4244-1742-1
DOI :
10.1109/EPEPEMC.2008.4635248
