A novel RESURFed double gates IGBT with superior performance

In this paper, we proposed a novel RESURFed double channels LIGBT which can achieve high breakdown voltage. The proposed structure, incorporating trench gate and planar gate, can significantly improve the capacity for handling high current and conductance modulation. P-top layer and deep n-drift/p-sub junction have been adopted, which results in a 745 V breakdown voltage with the drift length of 44 mu m only. Reduction in drift length can not only reduce on-resistance but also raise current density. Simulation results demonstrate that the forward voltage drop can lower by 12% relative to the conventional one while breakdown voltage can increase by 18%.