Title :
An empiric approach to establishing MOSFET failure rate induced by Single-Event Burnout
Author :
van Duivenbode, J. ; Smet, Bart
Author_Institution :
ASML, Veldhoven
Abstract :
Although the detrimental effect of single-event burnout on semiconductors has been known for over two decades, component manufacturers publish little related data. Through extensive testing, the authors have established trustworthy reliability figures and demonstrate that single-event burnout has a remarkably high impact on power converter failure rate. A standard testing method is proposed for improved power semiconductor qualification testing.
Keywords :
circuit reliability; circuit testing; power MOSFET; MOSFET failure rate; power converter failure rate; power semiconductor qualification testing; reliability figures; single-event burnout; standard testing method; Circuit testing; FETs; Failure analysis; Fuses; MOSFET circuits; Manufacturing; Power amplifiers; Semiconductor device testing; Switches; Voltage; MOSFET; cosmic radiation; reliability;
Conference_Titel :
Power Electronics and Motion Control Conference, 2008. EPE-PEMC 2008. 13th
Conference_Location :
Poznan
Print_ISBN :
978-1-4244-1741-4
Electronic_ISBN :
978-1-4244-1742-1
DOI :
10.1109/EPEPEMC.2008.4635251
