DocumentCode
2977794
Title
An empiric approach to establishing MOSFET failure rate induced by Single-Event Burnout
Author
van Duivenbode, J. ; Smet, Bart
Author_Institution
ASML, Veldhoven
fYear
2008
fDate
1-3 Sept. 2008
Firstpage
102
Lastpage
107
Abstract
Although the detrimental effect of single-event burnout on semiconductors has been known for over two decades, component manufacturers publish little related data. Through extensive testing, the authors have established trustworthy reliability figures and demonstrate that single-event burnout has a remarkably high impact on power converter failure rate. A standard testing method is proposed for improved power semiconductor qualification testing.
Keywords
circuit reliability; circuit testing; power MOSFET; MOSFET failure rate; power converter failure rate; power semiconductor qualification testing; reliability figures; single-event burnout; standard testing method; Circuit testing; FETs; Failure analysis; Fuses; MOSFET circuits; Manufacturing; Power amplifiers; Semiconductor device testing; Switches; Voltage; MOSFET; cosmic radiation; reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Motion Control Conference, 2008. EPE-PEMC 2008. 13th
Conference_Location
Poznan
Print_ISBN
978-1-4244-1741-4
Electronic_ISBN
978-1-4244-1742-1
Type
conf
DOI
10.1109/EPEPEMC.2008.4635251
Filename
4635251
Link To Document