Title :
InGaAs/GaAs Ring-Like Nanostructures Grown by Droplet Epitaxy Using Molecular Beam Epitaxy
Author :
Pankaow, Naraporn ; Panyakeow, Somsak ; Ratanathammaphan, Somchai
Author_Institution :
Chulalongkorn Univ., Bangkok
Abstract :
Self-assembled InGaAs ring-shape nanostructures on GaAs were fabricated by droplet-epitaxy technique. Dependence on the substrate temperature and the amount of indium and gallium of the nanostructural properties was investigated. Photoluminescence results confirmed the high quality of nanocrystal.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; nanostructured materials; photoluminescence; self-assembly; semiconductor growth; InGaAs-GaAs; droplet epitaxy technique; molecular beam epitaxy; nanocrystal quality; nanostructural properties; photoluminescence; self-assembled ring-like nanostructures growth; substrate temperature; Epitaxial growth; Gallium arsenide; Gallium compounds; Indium gallium arsenide; Molecular beam epitaxial growth; Nanostructures; Photoluminescence; Self-assembly; Substrates; Temperature dependence;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381152
