DocumentCode :
2977868
Title :
Structural and Optical Characteristics of Strain-mediated InGaAs Quantum Dots
Author :
Chen, C.Y. ; Feng, David J. ; Tzeng, T.E. ; Lay, T.S. ; Chang, T.Y.
Author_Institution :
Nat. Sun Yat-Sen Univ., Kaohsiung
fYear :
2007
fDate :
14-18 May 2007
Firstpage :
186
Lastpage :
189
Abstract :
Self-assembled InxGa1-xAs quantum dots, with In(Ga)As capping layers to mediate the strain distribution were studied by x-ray reciprocal space mapping, TEM, and PL. The In0.75Ga0.25As QDs capped with In0.1Ga0.9As has a PL emission at lambda = 1.31 mum.
Keywords :
gallium arsenide; indium compounds; optical properties; semiconductor quantum dots; transmission electron microscopy; InGaAs; PL emission; TEM; capping layers; optical characteristics; strain distribution; strain-mediated self-assembled quantum dots; structural characteristics; transmission electron microscopy; wavelength 1.31 mum; x-ray reciprocal space mapping; Capacitive sensors; Conference proceedings; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Optical buffering; Optical materials; Quantum dots; Strain measurement; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
ISSN :
1092-8669
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2007.381153
Filename :
4265910
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2977868
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