• DocumentCode
    2977882
  • Title

    WO3 nanorods on Si by anodising A1/W/Ti laers

  • Author

    Calavia, R. ; Vilanova, X. ; Correig, X. ; Llobet, E. ; Mozalev, A.

  • Author_Institution
    Univ. Rovira i Virgili, Tarragona
  • fYear
    2009
  • fDate
    11-13 Feb. 2009
  • Firstpage
    327
  • Lastpage
    329
  • Abstract
    In this paper we show a method based on electrochemistry to obtain tungsten oxide nanorods on the surface of a silicon substrate. The technique implies the anodisation of an aluminium/ tungsten bilayer and the selective etching of porous alumina. The resulting nanostructured metal oxide films show a very high surface to volume ratio, which is of interest in a wide range of applications including gas and bio sensors or as special coatings in medical applications.
  • Keywords
    aluminium; anodisation; etching; nanostructured materials; nanotechnology; porous materials; titanium; tungsten; tungsten compounds; Al-W-Ti; Al2O3; Si; WO3; anodisation; anodising layers; electrochemistry; nanorods; nanostructured metal oxide films; porous alumina; selective etching; silicon substrate; tungsten oxide nanorods; Aluminum; Electron devices; Scanning electron microscopy; Semiconductor films; Silicon; Sputtering; Substrates; Titanium; Tungsten; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices, 2009. CDE 2009. Spanish Conference on
  • Conference_Location
    Santiago de Compostela
  • Print_ISBN
    978-1-4244-2838-0
  • Electronic_ISBN
    978-1-4244-2839-7
  • Type

    conf

  • DOI
    10.1109/SCED.2009.4800498
  • Filename
    4800498
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2977882