DocumentCode
2978009
Title
N-type Modulation-Doped InGaAlAs/InP Strain-Balanced Quantum-Well SOA/Laser Fabricated by a Multi-Step Wet-Etching Process
Author
Feng, David J Y ; Chiu, C.L. ; Chen, J.D. ; Lai, C.M. ; Lay, T.S. ; Chang, T.Y.
Author_Institution
Nat. Sun Yat-Sen Univ., Kaohsiung
fYear
2007
fDate
14-18 May 2007
Firstpage
211
Lastpage
214
Abstract
We report the design and MBE growth of strain-balanced epitaxial structures on InP containing n-type modulation-doped InGaAlAs/InGaAs quantum wells and a new multi-step wet-etching process for laser fabrication.
Keywords
aluminium compounds; doping; gallium arsenide; indium compounds; laser beam etching; molecular beam epitaxial growth; optical fabrication; optical modulation; quantum well lasers; semiconductor optical amplifiers; MBE growth; SOA-laser fabrication; molecular beam epitaxy; multistep wet-etching process; n-type modulation-doped InGaAlAs-InGaAs quantum wells; semiconductor-optical-amplifier; strain-balanced epitaxial structure; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical design; Optical device fabrication; Optical materials; Optical waveguides; Quantum well lasers; Semiconductor optical amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location
Matsue
ISSN
1092-8669
Print_ISBN
1-4244-0875-X
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2007.381160
Filename
4265917
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