DocumentCode :
2978018
Title :
Quantum Well Intermixing in InGaAs/InGaAlAs Structures by Using ICP-RIE and SiO2 Sputtering
Author :
Chang, H.J. ; Lin, E.Y. ; Chuang, K.Y. ; Chiu, C.L. ; Lay, T.S. ; Chang, T.Y.
Author_Institution :
Nat. Sun Yat-Sen Univ., Kaohsiung
fYear :
2007
fDate :
14-18 May 2007
Firstpage :
215
Lastpage :
217
Abstract :
A quantum well intermixing process combining ICP-RIE and SiO2 sputtering was investigated for the InGaAs/InGaAlAs multi-quantum wells. Optimal conditions including ICP-RIE etching depth, SiO2 deposition, and RTA process were obtained for a 60-nm blueshift.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; rapid thermal annealing; semiconductor quantum wells; silicon compounds; spectral line shift; sputter etching; ICP-RIE etching; InGaAs-InGaAlAs; RTA process; SiO2; inductively coupled plasma; multiquantum well intermixing structure; rapid thermal annealing; sputtering; Atomic layer deposition; Indium gallium arsenide; Indium phosphide; Photonic band gap; Plasma applications; Plasma materials processing; Plasma temperature; Rapid thermal annealing; Sputter etching; Sputtering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
ISSN :
1092-8669
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2007.381161
Filename :
4265918
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2978018
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