N-type emitters passivation through antireflective phosphorus doped a-SiCxNy:H(n) stacks

Author

Orpella, A. ; Blanqué, S. ; Roiati, V. ; Martín, I. ; Voz, C. ; Puigdollers, J. ; Alcubilla, R.

Author_Institution

Grupo de Micro y Nanotecnologias MNT, Univ. Politec. de Catalunya, Barcelona

fYear

2009

fDate

11-13 Feb. 2009

Firstpage

357

Lastpage

359

Abstract

This paper studies the passivation of industrially textured deep silicon emitters using amorphous silicon carbonitride layers in stack configuration, deposited by plasma enhanced chemical vapor deposition. With this technique, emitter saturation current density can be decreased to values around 250 fA middot cm^-2. As a consequence, open circuit voltages can be increased 25 mV achieving values around 640 mV.

Keywords

current density; elemental semiconductors; hydrogen; passivation; phosphorus; plasma CVD; silicon; silicon compounds; solar cells; N-type emitter passivation; Si; SiC_xN_y:H,P; amorphous silicon carbonitride layers; antireflective phosphorus doped stacks; emitter saturation current density; open circuit voltages; plasma enhanced chemical vapor deposition; stack configuration; textured deep silicon emitters; Amorphous silicon; Chemical industry; Chemical vapor deposition; Circuits; Current density; Passivation; Plasma applications; Plasma chemistry; Plasma density; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2009. CDE 2009. Spanish Conference on

Conference_Location

Santiago de Compostela

Print_ISBN

978-1-4244-2838-0

Electronic_ISBN

978-1-4244-2839-7

Type

conf

DOI

10.1109/SCED.2009.4800506

Filename

4800506