Processing of InP-Based Shallow Ridge Laser Waveguides Using a HBr ICP Plasma

Author

Bouchoule, S. ; Azouigui, S. ; Patriarche, G. ; Guilet, S. ; Le Gratiet, L. ; Martinez, A. ; Lelarge, F. ; Ramdane, A.

Author_Institution

CNRS, Marcoussis

fYear

2007

fDate

14-18 May 2007

Firstpage

218

Lastpage

221

Abstract

Pure HBr ICP etching is investigated to realize ridge waveguides on InP substrate. The ICP power is the main parameter controlling the anisotropy. Vertical sidewalls, smooth etched surface, and moderate etch rate are obtained under optimized pressure and temperature conditions. The process is applied to the realization of InAs/InP QDs DFB lasers with a lateral metallic Bragg grating.

Keywords

Bragg gratings; III-V semiconductors; distributed Bragg reflector lasers; hydrogen compounds; indium compounds; optical waveguides; plasma materials processing; quantum dot lasers; ridge waveguides; sputter etching; waveguide lasers; DFB lasers; HBr; ICP etching; ICP plasma; InAs-InP; lateral metallic Bragg grating; ridge waveguides; semiconductor quantum dot lasers; shallow ridge laser waveguides; Anisotropic magnetoresistance; Bragg gratings; Etching; Indium phosphide; Laser modes; Plasma applications; Plasma materials processing; Plasma temperature; Plasma waves; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0875-X

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381162

Filename

4265919