Title :
Processing of InP-Based Shallow Ridge Laser Waveguides Using a HBr ICP Plasma
Author :
Bouchoule, S. ; Azouigui, S. ; Patriarche, G. ; Guilet, S. ; Le Gratiet, L. ; Martinez, A. ; Lelarge, F. ; Ramdane, A.
Author_Institution :
CNRS, Marcoussis
Abstract :
Pure HBr ICP etching is investigated to realize ridge waveguides on InP substrate. The ICP power is the main parameter controlling the anisotropy. Vertical sidewalls, smooth etched surface, and moderate etch rate are obtained under optimized pressure and temperature conditions. The process is applied to the realization of InAs/InP QDs DFB lasers with a lateral metallic Bragg grating.
Keywords :
Bragg gratings; III-V semiconductors; distributed Bragg reflector lasers; hydrogen compounds; indium compounds; optical waveguides; plasma materials processing; quantum dot lasers; ridge waveguides; sputter etching; waveguide lasers; DFB lasers; HBr; ICP etching; ICP plasma; InAs-InP; lateral metallic Bragg grating; ridge waveguides; semiconductor quantum dot lasers; shallow ridge laser waveguides; Anisotropic magnetoresistance; Bragg gratings; Etching; Indium phosphide; Laser modes; Plasma applications; Plasma materials processing; Plasma temperature; Plasma waves; Waveguide lasers;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381162
