Title :
Room Temperature Dry Etching of INP-Based Semiconductors for Optoelectronic Device Fabrication Using Inductively Coupled Plasma
Author :
Sun, Changzheng ; Wang, Jian ; Zhou, Qiwei ; Xiong, Bing ; Luo, Yi
Author_Institution :
Tsinghua Univ., Beijing
Abstract :
Dry etching of InP-based semiconductors is carried out by inductively coupled plasma (ICP) for optoelectronic device fabrication. The etching conditions for different chemical mixtures are optimized to ensure high anisotropy and smooth surface morphology.
Keywords :
III-V semiconductors; etching; indium compounds; optical fabrication; optoelectronic devices; plasma materials processing; ICP; InP; anisotropy; etching conditions; inductively coupled plasma; optoelectronic device fabrication; room temperature dry etching process; smooth surface morphology; temperature 293 K to 298 K; Anisotropic magnetoresistance; Chemicals; Dry etching; Optical device fabrication; Optoelectronic devices; Plasma applications; Plasma chemistry; Plasma devices; Plasma temperature; Surface morphology;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381165
