DocumentCode
2978103
Title
Room Temperature Dry Etching of INP-Based Semiconductors for Optoelectronic Device Fabrication Using Inductively Coupled Plasma
Author
Sun, Changzheng ; Wang, Jian ; Zhou, Qiwei ; Xiong, Bing ; Luo, Yi
Author_Institution
Tsinghua Univ., Beijing
fYear
2007
fDate
14-18 May 2007
Firstpage
229
Lastpage
232
Abstract
Dry etching of InP-based semiconductors is carried out by inductively coupled plasma (ICP) for optoelectronic device fabrication. The etching conditions for different chemical mixtures are optimized to ensure high anisotropy and smooth surface morphology.
Keywords
III-V semiconductors; etching; indium compounds; optical fabrication; optoelectronic devices; plasma materials processing; ICP; InP; anisotropy; etching conditions; inductively coupled plasma; optoelectronic device fabrication; room temperature dry etching process; smooth surface morphology; temperature 293 K to 298 K; Anisotropic magnetoresistance; Chemicals; Dry etching; Optical device fabrication; Optoelectronic devices; Plasma applications; Plasma chemistry; Plasma devices; Plasma temperature; Surface morphology;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location
Matsue
ISSN
1092-8669
Print_ISBN
1-4244-0875-X
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2007.381165
Filename
4265922
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